Efficient base driver circuit for silicon carbide bipolar junction transistors

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

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High Power Bipolar Junction Transistors in Silicon Carbide

As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for appli...

Silicon Carbide “super” Junction Transistors Operating at 500 °c

1200 V/ 3 mm active-area SiC “Super” Junction Transistors (SJTs) display current gains as high as 88 and majority carrier operation up to 250 °C. The SJT operation shifts from purely unipolar to bipolar-mode at temperatures ≥ 300 °C. The leakage currents at a blocking voltage of 1200 V remain below 100 μA, even at 325 °C. Temperature-independent turn-on and turn-off times < 15 ns are measured u...